Profile of Dr. S. Parthiban

Professional Brief

 

Professional Experience

Postdoctoral Research Associate, Organic Device Physics Laboratory, Department of Physics, Pukyong National University, Busan, South Korea
Senior Researcher, Yonsei Institute of Convergence Technology, Yonsei University, Incheon, South Korea
Postdoctoral Researcher, Department of Materials Science, CENIMAT-I3N and CEMOP- UNINOVA, FCT-UN, Caparica, Portugal

Research Interests

  • Oxide thin-film
  • Amorphous oxide thin-film transistor and circuit fabrication
  • Solar cells

Sponsored Research Projects

S. No Title of the project Role (PI / Co-PI) Funding agency and year of sanction Budget Lakhs Duration
and status
1 Amorphous metal oxide semiconductor thin-film transistor fabrication via solution process and photochemical activation techniques for flexible electronics applications PI DST-SERB (2016) 40.25 Ongoing
2 Development of thermoelectric module using doped and nanostructured ZnO based materials for energy generation Co-PI DST SERB (2018) 50.80 Ongoing

Publications

Selected peer-reviewed publications
Amorphous boron–indium–zinc-oxide active channel layers for thin-film transistor fabrication
S. Parthiban, J. Y.Kwon
Journal of Materials Chemistry | 2015 | C 3 1661-1665, DOI: 10.1039/C4TC01831A
Selective Area Growth of Bernal Bilayer Epitaxial Graphene on 4H-SiC (0001) Substrate by Electron-Beam Irradiation
S. Parthiban, P. Dharmaraj, K. Jeganathan, J. Y. Kwon, S. Gautam, K. H. Chae, K. Asokan
Applied Physics Letter | 2014 | 105, 181601, DOI: 10.1063/1.4901074
Sputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors
S. Parthiban, S. H. Kim, J. Y. Kwon
IEEE- Electron Device Letter | 2014 | 35, 1028-1030, DOI:10.1109/LED.2014.2345740
Role of dopants as carrier suppressor and strong binder in amorphous indium based thin-film transistor (Review Paper)
S. Parthiban, J. Y. Kwon
Journal of Materials Research | 2014 | 29, 1-13, DOI:10.1557/jmr.2014.187.
Effects of post-annealing temperature on carbon -incorporated amorphous indium–zinc-oxide thin film transistor fabrication using sputtering at room temperature
S. Parthiban, J. Y. Kwon
RSC Advances| 2014 | 4, 21958, DOI: 10.1039/C4RA01782J
Performance of microcrytaline zinc tin oxide thin-film transistors processed by spray pyrolysis
S. Parthiban, E. Elangovan, K. J. Saji, P. K. Nayak, A. Goncalves, D. Nunes L. Pereira, P.Barquinha, T. Busani, E. Fortunato, R. Martins
IEEE –Journal of Display Tech| 2013 | 99, 1, DOI:10.1109/JDT.2013.2262096
Effect of Li3+ heavy ion irradiation on the Mo doped In2O3 thin films prepared by spray pyrolysis technique
S. Parthiban, E. Elangovan, K. Ramamurthi, D. Kanjilal, K. Asokan, R. Martins, E. Fortunato
Journal of Physics D: Applied Physics| 2011 | 44, 085404, DOI:10.1088/0022- 3727/44/8/085404
Investigations of high near infra-red transparency and carrier mobility Mo doped In2O3 thin films prepared by spray pyrolysis technique
S. Parthiban, E. Elangovan, K .Ramamurthi, R. Martins , E. Fortunato
Solar Energy Materials & Solar Cells| 2010 | 94, 406, DOI: 10.1016/j.solmat.2009.10.017
High near infra-red transparency and carrier mobility of Mo doped In2O3 thin films for optoelectronics applications
S. Parthiban, E. Elangovan, K .Ramamurthi, R. Martins, E. Fortunato
Journal of Applied Physics | 2009 | 106, 063716, DOI.org/10.1063/1.3224946
Spray deposited molybdenum doped indium oxide thin films with high near infra-red transparency and carrier mobility thin films
S. Parthiban, K .Ramamurthi, E. Elangovan, R. Martins, E. Fortunato
Applied Physics Letters | 2009 | 94, 212101, DOI.org/10.1063/1.3142424
High near infrared transparent molybdenum doped indium oxide thin films for nano-crystalline silicon solar cell applications
S. Parthiban, V. Gokulakrishnan, K. Ramamurthi, E. Elangovan, R. Martins, E.Fortunato, R. Ganesan
Solar Energy Materials & Solar Cells | 2009 | 93, 92, DOI: 10.1016/j.solmat.2008.08.007

Research Scholars

Oxide Thin-film and Device Laboratory Students
Pursuing at Present Mr. S. Arulkumar, MTech
Designation : Junior Research Fellow, DST-SERB, INDIA
Area of Research: Amorphous metal oxide thin-film transistor and circuit fabrication
E-mail: sak@psgias.ac.in
Pursuing at Present Mr. T. Senthilkumar, ME
Designation : Research Fellow
Area of Research : Silicon Solar cell fabrication
E-mail : senthiltsk1995@gmail.com